I Do Not Know How To Do Any Of These Questions. Can Someone Please
Get college assignment help at Smashing Essays I do not know how to do any of these questions. Can someone please explain ho to do both of them. The second one is asking for Norton current (In) and norton resistance (Rn)
1. GIVEN: Use CIRCUIT 2 VAC = 211 V, Sinusoidal Fin = 60 Hz
1. GIVEN: Use CIRCUIT 2 VAC = 211 V, sinusoidal fin = 60 Hz N3:N4 = 18 : 4 R7 = 18 kOhm VD(FB) = 0.7 V FIND: Calculate the peak output voltage across the load R7, in V. 2. GIVEN: VAC = 216 V fin = 69 Hz N3:N4 =16″4 R7 = 19 Ohm VD(FB) = 0.7 V Determine the maximum forward current along the diode, in mA. 3. GIVEN: Use CIRCUIT 1 VAC = 220 V, sinusoidal fin = 60 Hz N1:N2 = 4:1 R6 = 5 kOhm Use VD(FB) = 0.7V FIND: Find the frequency of the output voltage across the load R6, in Hz. 4. GIVEN: Use CIRCUIT 2 VAC = 219 V, sinusoidal fin = 61 Hz N3:N4 = 12 : 4 R7 = 12 kOhm VD(FB) = 0.7 V FIND: Determine the maximum reverse voltage across the diode, in V. 5. GIVEN: Use CIRCUIT 1 VAC = 220 V, sinusoidal fin = 60 Hz N1:N2 = 9:1 R6 = 5 kOhm Use VD(FB) = 0.7V FIND: Calculate the peak output voltage across the load R6, in V. 6. GIVEN: Use CIRCUIT 1 VAC = 220 V, sinusoidal fin = 60 Hz N1:N2 = 5:1 R6 = 8 kOhm Use VD(FB) = 0.7V FIND: Determine the maximum forward current along the diode, in mA 7. GIVEN: Use CIRCUIT 1 VAC = 220 V, sinusoidal fin = 60 Hz N1:N2 = 6:1 R6 = 6 kOhm Use VD(FB) = 0.7V FIND: Determine the maximum reverse voltage across the diode, in V.
A Curve Tracer Is A Test Instrument That Plots The V-i Characteristic Of A
A curve tracer is a test instrument that plots the v-i characteristic of a device. In this lab you’ll build a curve tracer and use it to explore the v-i characteristics of a mosfet. The schematic below shows a simple circuit that will plot the v-i characteristic of a resistor when a transient analysis is run. Please observe that The Vtest voltage source generates a triangle waveform that ramps from 0V to 3V then back again over a period of 1ms. The stop time of the transient analysis is chosen to be 0.5ms so that the voltage on node vtest will be just the rising ramp from 0V to 3V. The voltage probe on the vtest node has its “Plot color” set to “x-axis”, which asks the tool to use the values sampled by the probe as the x-coordinate when plotting. So the horizontal axis of the plot showing the transient results will be the voltage vtest instead of time. A current probe — a short wire segment with a colored chevron showing the reference direction — is used to plot the current flowing into the resistor. As with a voltage probe, one can double-click a current probe to select the plot color that will be used when plotting the current. You can use the label component (looks like a short straight line in the parts bin) to add names to circuit nodes. Nodes with the same name are considered to be electrically connected. The combined effect of this circuitry is that running a transient analysis will produce a plot of current through the resistor as a function of vtest, the voltage across the resistor. Click on TRAN in the diagram below to see the resulting plot. Figure 1. Curve Tracer for a resistor Not surprisingly, the v-i characteristic is a straight line passing through the origin, i.e., the resistor is linear device. As a sanity check, use your mouse to make a measurement on the plot of the current I at a particular voltage V. For example at V = 1.005, the measurement for I is 304.545uA. Now compute R = V/I = 1.005/.000304505 = 3300.4 ohms. (The small numerical discrepency comes from the rounding that occurs when printing numerical values in the plot window.) Now it’s your turn! Constructing a similar test setup in the schematic diagram below, plot the v-i characteristic of a mosfet. You may find it useful to first review Section 7.3 in the text. The behavior of the mosfet is determined by two voltages: 𝑣𝐷𝑆, the potential difference between the drain and source terminals and 𝑣𝐺𝑆, the potential difference between the gate and source terminals. As the test device use a mosfet with a W/L parameter of 1. Use a DC voltage source to supply 𝑣𝐺𝑆: you’ll want to try a range of values — 0V, 0.5V, 1.0V, 1.5V, 2.0V, 2.5V and 3V — varying from ground up to the power supply voltage. You can try the various 𝑣𝐺𝑆 values one at a time, but it’s more instructive to see them plotted together to get a sense of how varying the 𝑣𝐺𝑆 changes the current through the mosfet switch. To get multiple v-i curves at the same time, simply replicate the mosfet test setup (i.e., the current probe, mosfet and gate voltage source), chosing different values for gate voltage source and changing the plot color for the current probe. With a little effort, after clicking on TRAN you can get a plot like that shown in Figure 2 below. Compare your results to Figure 7.11 in the text. It’s easy to see the the mosfet is a non-linear device! Figure 2. Mosfet v-i charactertistic for different 𝑣𝐺𝑆 values Please answer the following questions using measurements taken from the v-i plots you created. Compute the effective 𝑅𝑂𝑁 in the triode region of the v-i characteritic when 𝑣𝐺𝑆=3𝑉, i.e., measure the current through the mosfet switch when, say, 𝑣𝐷𝑆=1𝑉 and report 𝑣𝐷𝑆𝑖𝐷𝑆 as your answer below. Remember this should be for a device whose W/L is 1. The current through a mosfet switch operating in the saturation region is given by Equation 7.8 of the textbook: 𝑖𝐷𝑆=𝐾(𝑣𝐺𝑆−𝑉𝑇)22 We can compute an estimate for the threshold voltage 𝑉𝑇 of the mosfet switch from the ratio of two 𝑖𝐷𝑆measurements in the saturation region for different 𝑣𝐺𝑆 values. 𝑖𝐷𝑆1𝑖𝐷𝑆2=(𝑣𝐺𝑆1−𝑉𝑇)2(𝑣𝐺𝑆2−𝑉𝑇)2 At 𝑣𝐷𝑆≈3𝑉, well into the saturation region, measure 𝑖𝐷𝑆 twice, once when 𝑣𝐺𝑆=3𝑉 and once when 𝑣𝐺𝑆=2.5. Plug the measurements and the appropriate values for 𝑣𝐺𝑆 into the equation above, solve for 𝑉𝑇and report your result below. Finally, using your measurements and calculated value for 𝑉𝑇, compute the value for the constant 𝐾 in equation 7.8 (see above) and report the results. Moral: by using a curve tracer, it’s possible to make measurements from an actual device and derive estimates for the fundamental mosfet properties, 𝐾 and 𝑉𝑇, that designers need to model how the devices will work in situ. Food for thought: you might try using your curve tracer to plot the v-i characteristics of a diode, another non-linear device.
Analysis of the capital controls as a tool of managing capital flows in the Eurozone countries
Results are attached. I need regression results to examine links between capital controls, introduction of euro and sovereign debt crisis in Greece.Dependent variable is the Net Foreign Asset Position (NFAP). Independent variables are Current Account Balance (D2CA), Fiscal Balance (DFB), Trade Balance (DTB), Real GDP Growth (DRGDP), Gross National Income (D2GNI), Employment Rate (E) and sovereign debt crisis dummy 1 and capital controls dummy 2. DFB, DTB, DRGDP are estimated in 1st order difference and D2CA, D2GNI are estimates in 2nd order difference.
How to build an allocation model between investment types (passive management, active management)?
My research will focus on how to build a passive investment because passive funds, especially ETF, seem to have much lower fee charged and more advantages than active managed funds. The discussion with my supervisor was about mainly doing research on ETF, especially smart beta ETF because the ETFs with smart beta contains both the advantages of active and passive managed funds. What he said was about comparing the ETF (according to what it features) with index such as S
Industrialization and the Rise of a Regulated Economy
Topic and Thesis Statement—choose one of the following as your Thesis Statement: THESIS STATEMENT 1. From the late 1800s to the end of the 1930s, increasing government interventions and regulations of business tended to help the overall economy and the common workers. THESIS STATEMENT 2. From the late 1800s to the end of the 1930s, increasing government interventions and regulations of business tended to hurt the overall economy and the common workers. 1. Part One—one paragraph. INTRODUCTION AND THESIS STATEMENT. The position you choose will be the thesis statement in your opening paragraph; make it the last sentence of the paragraph.2. Part Two—two paragraphs normally. FOUR EXAMPLES. To support your thesis, use four specific examples from different decades between 1865 and 1940. However, one of your four examples must be from the 1930s. The examples should be specific and clearly support your thesis.3. Part Three—one paragraph normally. DEALING WITH THE OPPOSING VIEW. The opposing view is the thesis statement you did NOT choose. Identify the opposing view and explain why the opposing view is weak in comparison to yours.4. Part Four—one paragraph: LEGACY TODAY AND CONCLUSION: Consider your life and work today in relation to issues of government involvement and regulation of business and the economy. Also consider your major. Many of these types of government economic programs, laws, and regulations from this period (late 1800s to the 1930s) became a normative part of our economic structure. In what way does the history you have shown shape or impact issues in your workplace or desired profession? This will work as the conclusion paragraph. Length: The paper should be 500-to-750 words in length. 500 is a minimum. 750 is a guideline as a maximum. This word-count does not include any title page or sources list. Research and References: You must use a MINIMUM of three sources; the Schultz textbook must be one of them. Your other two sources must be drawn from the list provided below on this instruction sheet. SWS Form for the textbook:Kevin M. Schultz. 2018. HIST: Volume 2: U.S. History since 1865. 5th ed.Choose sources relevant to the topic government economic interventions and the position you are taking:S. Gompers. 1914. The American Labor Movement: Its Makeup, Achievements, and Aspirations. http://wwphs.sharpschool.com/UserFiles/Servers/Server_10640642/File/bugge/Chapter 21/Gompers.pdf R. La Follette. 1924. La Follette’s Progressive Platform. http://college.cengage.com/history/wadsworth_9781133309888/unprotected/ps/follette.html H. D. Lloyd. June, 1884. The Lords of Industry from North American Review, 331. In Modern History Sourcebook. https://sourcebooks.fordham.edu/mod/1884hdlloyd.asp Populist Party Platform. 1896. http://college.cengage.com/history/wadsworth_9781133309888/unprotected/ps/populist_partyplatform_1896.htmKevin M. Schultz. 2018. HIST: Volume 2: U.S. History since 1865. 5th ed.Upton Sinclair. 1906. Attack on the Meatpackers.http://college.cengage.com/history/wadsworth_9781133309888/unprotected/ps/attack_meatpackers.htm L. Steffens. 1904. The Shame of the Cities. http://college.cengage.com/history/wadsworth_9781133309888/unprotected/ps/steffens.html F. W. Taylor. 1911. The Principles of Scientific Management. http://college.cengage.com/history/wadsworth_9781133309888/courseware/ps/taylor.html J. Whitaker. 1871. The Impact of the Factory on Worker Health. Retrieved from http://college.cengage.com/history/wadsworth_9781133309888/unprotected/ps/impact_factory.htm
A 120-V, Series-wound Motor Has A Field Resistance Of 4.0 And An Armature
A 120-V, series-wound motor has a field resistance of 4.0 and an armature resistance of 2.5 . (a) Determine the current drawn by the motor at the very instant it is switched on, i.e., when it has not started to rotate. (b) When it is operating at nominal speed, a back emf of 85.0 V is generated. How much current is drawn in this case? (c) What is the furnished mechanical power? (d) How much power is dissipated? (e) What is the power furnished by the source? (f) Suppose now the load on the motor has increased so that it draws a 16.0-A current, what is the back emf of the motor in this case.
10 slide ppt on basic internet infrastructure for 2 countries
Choose two countries (excluding the United States), and prepare a presentation that explains their basic Internet infrastructure. Discuss the origins and key technologies behind the Internet for your chosen countries. Include their public and commercial infrastructures and their backbone connectivity to the Internet. Create a graphic illustrating a common or best practices Internet infrastructure, and utilize it in your presentation.You must elaborate on the information provided on each slide. To do so, you can either utilize the speaker notes function within PowerPoint to summarize and/or explain the slides’ contents, or you can record voice narration for each slide. You are not required to do both, but you must choose one of the two options above to receive full credit.Your PowerPoint presentation must contain eight to 10 slides; the title and reference slides do not count toward meeting the minimum slide requirement.
What Instrument Is Usually Used To Measure Flow In Open Channels In Conjunction With
What instrument is usually used to measure flow in open channels in conjunction with a weir?
What Measuring Instruments (in Addition To A Differential Pressure Transmitter) Would You Require To
What measuring instruments (in addition to a differential pressure transmitter) would you require to perform a mass flow calculation using an orifice plate or flow standardisation?
The Effect of Electronic Word-of-Mouth (eWOM) on social media toward Trust and Consumer Buying Decision: A Case Study of Cosmetics Products
Get college assignment help at Smashing Essays Dissertation Result ChapterDetails:1. Drafting a questionare (Quantitative method)** the questionnaire need to be approved by my advisor first **2. Survey – approx. 200 respondents 3. Using SPSS to analyse the result – raw data of SPSS file is required
The Cahora Bassa Dam, Located In Mozambique, Is The Highest Dam In Africa. The
The Cahora Bassa dam, located in Mozambique, is the highest dam in Africa. The hydroelectric facility within the dam generates an average 1,925 MWe. Nearly all of this electricity is exported to South Africa. The power station is linked to Pretoria, 1,420 km away, by a 533.0 kV high-voltage DC (HVDC) transmission line. a. The transmission line consists of eight cables made of aluminum with a steel core for strength and structural support. The total cross-sectional diameter of each cable is 28 mm, while the cross-sectional diameter of the steel core is 14 mm (consider the cross-sectional area as a steel circle in the middle of an an aluminum circle). Treat each cable as if it consisted of one steel and one aluminum resistor arranged in parallel, while the cables themselves are arranged in parallel with each other. What is the total resistance of the transmission line? Material resistivities: (15 points) b. On average, how much current flows through the transmission lines? What is the power loss in the line? What is the percentage of power loss relative to the average power generated? (10 points) c. If the power were transmitted at 333.0 kV over the same cables, what would the power loss percentage be? (10 points) d. If the dam’s power is sold wholesale to South Africa for US$90.00/MWh, how much revenue would be lost per year, transmitting at 333.0 kV instead of 533.0 kV? (note: the 1,920 MW average production already accounts for the dam’s capacity factor) (5 points)
Design A 4-bit Grey Code Adder. B) The Adder Has Three Components: Two 4-bit
Design a 4-bit grey code adder. b) The adder has three components: two 4-bit grey-to-binary converters, a 4-bit binary adder, and a 5-bit binary-to-grey code convertor. c) Model this design with SV as a combinational block. d) Write one test bench to verify the SV model. it will receive a grey input that then will be converter into binary to be added then out putting from binary back to gray
please help me figure out these problems. part 1: directions:
Question please help me figure out these problems. part 1: directions: style=”color:rgb(51,51,51);”>Rewrite the following sentences, replacing the italicized phrase with a phrase consisting of seguir the gerund of the same verb. The two sentences will mean the same thing.EJEMPLO:Todavía trabaja allí.Sigue trabajando allí.1)Todavía ahorran mucho dinero. mucho dinero.2)Todavía contradices al profesor. al profesor.3)Todavía disfruto de mis vacaciones. de mis vacaciones.4)Todavía posponen la reunión. la reunión.5)Ellos todavía mienten.Ellos .6)Yo todavía me levanto temprano.Yo temprano.7)Los estudiantes todavía se esfuerzan mucho.Los estudiantes mucho.8)Nosotros todavía nos interesamos en el medio ambiente.Nosotros en el medio ambiente.part 2: directions: Use no dejar de infinitive to tell your friend that Alfredo keeps on doing the most annoying things.EJEMPLO:¿Alfredo sigue fumando?Sí, no deja de fumar.1)¿Alfredo sigue molestando?Sí, .2)¿Alfredo sigue interrumpiendo?Sí, .3)¿Alfredo sigue llamándote?Sí, .4)¿Alfredo sigue haciendo ruido?Sí, .5)¿Alfredo sigue contradiciendo a todo el mundo?Sí, .6)¿Alfredo sigue mintiendo?Sí, .7)¿Alfredo sigue inventando excusas?Sí, .8)¿Alfredo sigue pidiéndote dinero?Sí, .part 3: Directions: Use ya no to tell your friend that the things he is asking about are no longer happening.EJEMPLO:¿Paula sigue trabajando aquí?No, ya no trabaja aquí.1)¿Los estudiantes siguen cuidando el medio ambiente?No, el medio ambiente.2)¿Esta empresa sigue tirando basura al río?No, basura al río.3)¿Los políticos siguen agravando la situación?No, la situación.4)¿Sigues estudiando japonés?No, japonés.5)¿Los Pérez siguen viviendo en este barrio?No, en este barrio.6)¿Ana María sigue interesándose en política?No, en política.7)¿Sigues comprando en aquel almacén?No, en aquel almacén.8)¿Tu familia sigue buscando casa en otro barrio?No, casa en otro barrio.
Consider A Crystalline Silicon Solar Cell, Under Thermal Equilibirum At Room Temperature 298.15[K],
Consider a crystalline silicon solar cell, under thermal equilibirum at room temperature 298.15[K], with a thickness of 250[𝜇m]. The doping of the p- and n-regions of the solar cell is 𝑁A=3⋅1016[cm−3] and 𝑁D=1⋅1019[cm−3], respectively. The intrinsic carrier concentration of silicon at room temperature is 𝑛i=1.5⋅1010[cm−3]. The quality of the crystalline silicon regions is expressed by the lifetime and diffusion coefficient of minority carriers: 𝜏n=5[𝜇s],𝜏p=0.5[𝜇s], 𝐷n=18[cm2⋅s−1], 𝐷p=6[cm2⋅s−1]. Under standard test conditions (STC), the solar cell has an uniform generation rate, 𝐺=2.23⋅1019[cm−3⋅s−1]. Assume that all the doping atoms are ionized and the solar cell is an ideal Shockley diode. The diffusion length, carrier lifetime and diffusion coefficient are related according to: 𝐿2n=𝐷n⋅𝜏n and 𝐿2p=𝐷p⋅𝜏p A) What is the diffusion length of electrons in the p-type region 𝐿n? Give the answer in micrometers [𝜇m].
Solve It Using Smith Chart What Kind Of Information? Find L1 And L2
solve it using smith chart what kind of information? find l1 and l2
Consider A Crystalline Silicon Solar Cell, Under Thermal Equilibirum At Room Temperature 298.15[K], With
Consider a crystalline silicon solar cell, under thermal equilibirum at room temperature 298.15[K], with a thickness of 250[𝜇m]. The doping of the p- and n-regions of the solar cell is 𝑁A=3⋅1016[cm−3] and 𝑁D=1⋅1019[cm−3], respectively. The intrinsic carrier concentration of silicon at room temperature is 𝑛i=1.5⋅1010[cm−3]. The quality of the crystalline silicon regions is expressed by the lifetime and diffusion coefficient of minority carriers: 𝜏n=5[𝜇s],𝜏p=0.5[𝜇s], 𝐷n=18[cm2⋅s−1], 𝐷p=6[cm2⋅s−1]. Under standard test conditions (STC), the solar cell has an uniform generation rate, 𝐺=2.23⋅1019[cm−3⋅s−1]. Assume that all the doping atoms are ionized and the solar cell is an ideal Shockley diode. The diffusion length, carrier lifetime and diffusion coefficient are related according to: 𝐿2n=𝐷n⋅𝜏n and 𝐿2p=𝐷p⋅𝜏p B) What is the diffusion length of holes in the n-type region 𝐿p? Give the answer in micrometers [𝜇m].
Consider A Crystalline Silicon Solar Cell, Under Thermal Equilibirum At Room Temperature 298.15[K], With
Consider a crystalline silicon solar cell, under thermal equilibirum at room temperature 298.15[K], with a thickness of 250[𝜇m]. The doping of the p- and n-regions of the solar cell is 𝑁A=3⋅1016[cm−3] and 𝑁D=1⋅1019[cm−3], respectively. The intrinsic carrier concentration of silicon at room temperature is 𝑛i=1.5⋅1010[cm−3]. The quality of the crystalline silicon regions is expressed by the lifetime and diffusion coefficient of minority carriers: 𝜏n=5[𝜇s],𝜏p=0.5[𝜇s], 𝐷n=18[cm2⋅s−1], 𝐷p=6[cm2⋅s−1]. Under standard test conditions (STC), the solar cell has an uniform generation rate, 𝐺=2.23⋅1019[cm−3⋅s−1]. Assume that all the doping atoms are ionized and the solar cell is an ideal Shockley diode. The diffusion length, carrier lifetime and diffusion coefficient are related according to: 𝐿2n=𝐷n⋅𝜏n and 𝐿2p=𝐷p⋅𝜏p C) Calculate the generated photocurrent in [mA⋅cm−2]. You may assume that the depletion region width is much smaller than the charge carrier diffusion lengths (𝑊<<𝐿n 𝐿p).
If $125 is invested at an interest rate of 18%
Question If $125 is invested at an interest rate of 18% per year and is compounded continuously, how much will the investment be worth in 2 years?Use the continuous compound interest formula A = Pert.
Consider A Crystalline Silicon Solar Cell, Under Thermal Equilibirum At Room Temperature 298.15[K],
Consider a crystalline silicon solar cell, under thermal equilibirum at room temperature 298.15[K], with a thickness of 250[𝜇m]. The doping of the p- and n-regions of the solar cell is 𝑁A=3⋅1016[cm−3] and 𝑁D=1⋅1019[cm−3], respectively. The intrinsic carrier concentration of silicon at room temperature is 𝑛i=1.5⋅1010[cm−3]. The quality of the crystalline silicon regions is expressed by the lifetime and diffusion coefficient of minority carriers: 𝜏n=5[𝜇s],𝜏p=0.5[𝜇s], 𝐷n=18[cm2⋅s−1], 𝐷p=6[cm2⋅s−1]. Under standard test conditions (STC), the solar cell has an uniform generation rate, 𝐺=2.23⋅1019[cm−3⋅s−1]. Assume that all the doping atoms are ionized and the solar cell is an ideal Shockley diode. The diffusion length, carrier lifetime and diffusion coefficient are related according to: 𝐿2n=𝐷n⋅𝜏n and 𝐿2p=𝐷p⋅𝜏p D) Calculate the saturation current density 𝐽0 in [mA⋅cm−2]. E) Calculate the open-circuit voltage 𝑉oc in [mV].
Economics Applied to A Community Bank
See uploaded specifics on the paper and paper worked on thus farPlease call me with any questions to discuss. I can write the last few pages pertaining to my own institution.
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